Samsung to achieve finer DDR6 circuits using mSAP technology
Samsung is making strides in memory chip development as the company works diligently to bring DDR6 chips to the market. And in recent news, the Korean tech giant reportedly plans to adopt a modified Semi-Additive Process (mSAP) packaging technology for DDR6 chip production.
According to Samsung VP Younggwan Ko at a recent seminar in Suwon, packaging technology must evolve alongside memory semiconductors as they become more powerful. Applying an mSAP process to its DDR6 memory chips will allow Samsung to create chips with finer circuits.
Samsung rivals have already employed mSAP for DDR5 memory, and Samsung is reportedly working on employing this packaging technology for DDR6, according to Ko (via The Elec).
Meanwhile, the Korean tech giant unveiled its first 24Gbps GDDR6 DRAM chips for graphics cards earlier this week. At the same time, the company is in an earlier stage of DDR6 development (not to be confused with GDDR6). Its DDR6 design could be finalized by 2024, according to a report from last year.
DDR6 is expected to be twice as fast and boast two times as many memory channels as DDR5. DDR6 could achieve transfer rates of around 12,800Mbps on JEDEC modules or 17,000Mbps overclocked.
Earlier last year, Samsung announced the world’s first DDR5-7200 512GB memory, which boasts 40% higher performance than DDR4 solutions.
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